Bibliographic Citation
| - Karboyan Serge, Tartarin Jean-Guy, Rzin M, Brunel L, Curutchet A, Malbert N, Labat N, Carisetti D, Lambert B, Mermoux M, Romain-Latu E, THOMAS Florian, Bouexière C, Moreau C. Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by pulsed I-V and low frequency noise measurements. Microelectronics Reliability, Elsevier, 2013, European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 53 (9-11), pp.1491-1495. ⟨10.1016/j.microrel.2013.07.020⟩
- KarboyanSerge, TartarinJean-Guy, RzinM, BrunelL, CurutchetA, MalbertN, LabatN, CarisettiD, LambertB, MermouxM, Romain-LatuE, ThomasFlorian, BouexièreC, MoreauC . Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements . Microelectronics Reliability, Elsevier, 2013, European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 53 (9-11), pp.1491-1495 . ⟨10.1016/j.microrel.2013.07.020⟩
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