About: Mohammed Zaknoune

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An Entity of Type : foaf:Person, within Data Space : data.idref.fr associated with source document(s)

Attributes	Values
type	Person
sameAs	Zaknoune, Mohammed (19..-....) Zaknoune, Mohammed (19..-....)
Life Event	http://www.idref.fr/122616073/birth
preferred label	Zaknoune, Mohammed (19..-....)
name	Mohammed Zaknoune
dbpedia-owl:citizenship	http://sws.geonames.org/3017382/
Language	http://lexvo.org/id/iso639-3/fra
Given name	Mohammed
familyName	Zaknoune
has biographical i...tion (Deprecated)	Titulaire d'un doctorat en Électronique (Lille 1, 1999) Directeur de Recherche, responsable du groupe ANODE (Advanced NanOmeter DEvices) au sein de l'Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN - UMR CNRS 8520 - Université de Lille)
gender	male
ORCID iD	0000-0001-8195-4196
Scopus ID	57203710173
is sameAs of	Zaknoune, Mohammed (19..-....) Zaknoune, Mohammed (19..-....) Zaknoune, Mohammed (19..-....) Zaknoune, Mohammed (19..-....)
is Thesis advisor of	Etude et développement de transistors bipolaires à hétérojonctions InP/GaAsSb reportés sur Si en vue de l'amélioration de la dissipation thermique http://www.sudoc.fr/176134832/id http://www.sudoc.fr/176025448/id http://www.sudoc.fr/151383774/id http://www.sudoc.fr/156027933/id http://www.sudoc.fr/203826582/id Développement d’une nouvelle filière de transistors bipolaires à hétérojonction AlIn(As)Sb/GaInSb en vue applications térahertz http://www.sudoc.fr/167714651/id http://www.sudoc.fr/084651253/id Conception et réalisation de transistors à effet de champ à hétérojonction sur substrat InP pour amplification de puissance en bande W http://www.sudoc.fr/261082116/id http://www.sudoc.fr/242117325/id http://www.sudoc.fr/246790792/id http://www.sudoc.fr/276933923/id
is Author of	http://www.sudoc.fr/053740440/id Étude de la technologie et des potentialités pour l'amplificaton de puissance hyperfréquence des transistors à effet de champ des filières phosphure AlGaInP/GaInAset métamorphique AlInAs/GaInAs sur substrat GaAs http://www.sudoc.fr/196736129/id 94 GHz high power performances of InAs0.4P0.6 channel HEMTs on InP Boundary conditions for realistic simulation of ultra short pseudomorphic high electron mobility transistor on indium phosphide substrates HEMT technology for power applications at 94 GHz and above 480-GHz fmax in InP/GaAsSb/InP DHBT with new base isolation µ-airbridge design Cascaded Brillouin fibre lasers coupled to unitravelling carrier photodiodes for narrow linewidth terahertz generation Sub-micron quantum cascadetransistors https://hal.archives-ouvertes.fr/hal-00141960#id Sub 0.1 µm – InP based HEMTs for high power and high frequency The indium content in metamorphic InAlAs/InGaAs HEMTs on GaAs substrate : a new structure parameter AlGaInP barrier layer grown by gas source molecular beam epitaxy for V-band AlGaInP/InGaAs/GaAs power pseudomorphic HEMT Terahertz photomixing in InP/InGaAs UTC-PD integrated with TEM horn antennas Components for optoelectronic generation of CW THz waves 400 GHz wireless link with photonic transmitter and heterodyne electronic Oscillateur Micro-Onde à THz Ultra-Stable 300 GHz link enabled by Yagi-Uda antenna V-shaped InAs/Al<sub>0.5</sub>Ga<sub>0.5</sub>Sb vertical tunnel FET on GaAs (001) substrate with I<sub>ON</sub>=433 µA.µm<sup>-1</sup> at V<sub>DS</sub>= 0.5V GaN schottky diode on silicon substrate for high power THz multiplier Metamorphic InAIAs/InGaAs HEMTs : material properties and device performance 60-GHz high power performance In0.32 Al0.68 As-In0.33 Ga 0.67 As metamorphic HEMTs on GaAs HEMT structures and technology on GaAs and InP for power amplification in millimeter wave range Gbit/s wireless transmission at 200 GHz carrier using optoelectronics THz technologies Microwave to terahertz ultra-stable oscillator MILLIPRISM : millimeter wave passive radiometric imaging system Non-linear analysis of a broadband power amplifier at 300 GHz Power Handling of GaN Schottky Diodes on Semi-Insulating Ammonothermal GaN Substrate at 94 GHz AlInAs/GaInAs HEMTs for power amplification at 60 GHz High efficiency uni-travelling-carrier photomixer at 1.55 µm for CW-THz generation Sub-micron quantum cascade transistor Study of resonant transport in InAs-based quantum hot electron transistors High performance heterostructure low barrier diodes for sub-THz detection https://hal.archives-ouvertes.fr/hal-04765465#id 0.06µm gate length metamorphic InAlAS/InGaAs HEMTs on GaAs with ft and fmax Evaluation de composants de la filière phosphure pour applications à 60 GHz Vers une électronique terahertz : contribution à la technologie des transistors III-V InAs based Esaki tunnel diodes Growth of Be-doped GaInP/GaAs heterostructure bipolar transistor by all solid-source multiwafer production molecular beam epitaxy Radiation pattern measurements of an integrated transverse electromagnetic horn antenna using a terahertz photomixing setup 50nm multi-gate In0.53Ga0.47As MOSFET with Ft of 150GHz 100nm-gate-length In0.47Ga0.53As multi-gate MOSFET : fabrication and characterisation 0.2-μm InP/GaAsSb DHBT power performance with 10 mW/μm² and 25% PAE at 94 GHz High performances of InP channel power HEMT at 94 GHz High-efficiency uni-travelling-carrier photomixer at 1.55 μm and spectroscopy application up to 1.4 THz Selective wet chemical etching of GaInSb and AlInSb for 6.25 Å HBT fabrication Submicrometer process and RF operation of InAs quantum hot-electron transistors Narrow linewidth tunable THz signal radiated by 1.55 µm photomixing Quantum cascade transistor High-definition television transmission at 600 GHz combining THz photonics hotspot and high-sensitivity heterodyne receiver https://hal.archives-ouvertes.fr/hal-00978295#id Nano-structured top contact with low optical polarization dependence for THz generation using photodiodes HEMTs with InP and InAsP channel for 94 GHz applications All-fiber continuous wave coherent homodyne terahertz spectrometer operating at 1.55 μm wavelengths Indoor 100 Gbit/s THz data link in the 300 GHz band using fast photodiodes https://hal.archives-ouvertes.fr/hal-00906107#id Photonics-enabled 1.04-Tbit/s Aggregated Data-rate in the 600-GHz-band Charge control and electron transport properties in InAlAs/InGaAs metamorphic HEMTs : effect of indium content Electroluminescence of metamorphic Inx Al1-xAs/InxGa1-xAs HEMTs on GaAs substrate Investigaton on fabrication of GaAsSb/InP UTC-PD based photomixer operating at 1.55 µm wavelengths A 300 GHz InP/GaAsSb/InP HBT for high data rate applications Active layers bonding of InP/GaAsSb/InP DHBTs in order to enhance thermal dissipation of InP-based devices Lattice matched and pseudomorphic InGaAs MOSHEMT with fT of 200GHz Gbit/s wireless transmission at 200 GHz carrier using optoelectronic THz technologies A 300-GHz wireless link employing a photonic transmitter and an active electronic receiver with a transmission bandwidth of 54 GHz High efficiency UTC photodiodes as photonic emitters for 300 GHz high spectral efficiency wireless communications Generation of mW level in the 300-GHz band using resonant-cavity-enhanced unitraveling carrier photodiodes

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