About: Dominique Vignaud

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Attributes	Values
type	Person
sameAs	Vignaud, Dominique (19..-.... ; directeur de thèse) Vignaud, Dominique (19..-.... ; directeur de thèse)
preferred label	Vignaud, Dominique (19..-.... ; directeur de thèse)
name	Dominique Vignaud
dbpedia-owl:citizenship	http://sws.geonames.org/3017382/
Language	http://lexvo.org/id/iso639-3/fra
Given name	Dominique
familyName	Vignaud
note	Auteur d’une thèse de 3e cycle en Physique des matériaux (Lille 1, 1983) Chargé de recherche au sein du groupe \"EPIPHY\" de l’Institut d'Electronique, de Microélectronique et de Nanotechnologie (IEMN - UMR CNRS 8520 - Université de Lille)
gender	male
Scopus ID	7004688366
is sameAs of	Vignaud, Dominique (19..-.... ; directeur de thèse) Vignaud, Dominique (19..-.... ; directeur de thèse)
is Thesis advisor of	Mise en oeuvre de l'épitaxie par jets moléculaires pour la synthèse de diamant monocristallin http://www.sudoc.fr/160271746/id Élaboration de graphène par épitaxie par jets moléculaires et caractérisation http://www.sudoc.fr/16033148X/id http://www.sudoc.fr/044103867/id http://www.sudoc.fr/136777031/id http://www.sudoc.fr/083846689/id http://www.sudoc.fr/258968257/id http://www.sudoc.fr/246781475/id Etude par photoluminescence des mécanismes de dégradation de la luminescence dans les hétérostructures GaAs-GaAIAs http://www.sudoc.fr/246327189/id
is Author of	http://www.sudoc.fr/043956971/id http://www.sudoc.fr/043045510/id Methyl radical beam sources for ultra high vacuum applications 60 GHz current gain cut-off frequency graphene nanoribbon FET Initial stages of graphitization on SiC(000-1), as studied by phase atomic force microscopy Epitaxy of MgO magnetic tunnel barriers on epitaxial graphene Luminescence properties of InAs dots grown by molecular beam epitaxy on metamorphic InxAl1-xAs (0.33 < x < 0.52) buffer layers Graphene growth by molecular beam epitaxy using a solid carbon source [Invited] Graphene growth by molecular beam epitaxy (on SiC) Transport mechanisms in a puckered graphene-on-lattice Luminescence de boites InAs obtenues par épitaxie par jets moléculaires sur des couches tampons métamorphiques InxAl1-xAs (0.33 = x = 0.52) Fabrication and characterization of passive and active devices based on epitaxially grown graphene Methyl radical beam sources for ultra high vacuum applications High mobility metamorphic AlSb/InAs heterostructures grown on InP substrates Graphene growth by molecular beam epitaxy on SiC Transistors à effet de champ à base du graphène sur SiC avec grille en T : homogénéité et performances Free-carrier absorption and growth temperature of highly Be-doped InGaAs in molecular beam epitaxy Performances and limitations of InAs/InAlAs metamorphic heterostructures on InP for high mobility devices Characterisation of SiO2 transferred GaAs electroabsorption modulator for 850 nm radio over fibre systems based on multimode fibre Influence of growth conditions on the structural, optical and electrical quality of MBE grown InAlAs/InGaAs metamorphic HEMTs on GaAs Graphene FETs With Aluminum Bottom-Gate Electrodes and Its Natural Oxide as Dielectrics Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density Conduction band offset in the AlxGayIn1–x–yP/Ga0.52In0.48P system as studied by luminescence spectroscopy https://hal.archives-ouvertes.fr/hal-00146111#id https://hal.archives-ouvertes.fr/hal-00798958#id Graphene layers grown by RTP-CVD on nickel and copper and their properties Graphene growth by molecular beam epitaxy [Invited] High frequency electronic devices : impact of beyond graphene materials Low-frequency noise parameter extraction method for single-layer graphene FETs Atomic scale flattening, step formation and graphitization blocking on 6H-and 4H-SiC{0001} surfaces under Si flux Barrières tunnel épitaxiées sur graphène Étude des propriétés optiques de GaAs plastiquement déformé Two-photon absorption in InP substrates in the 1.55 µm range Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density Mesures de temps de vie des électrons dans In0.53Ga0.47As dopé Be en fonction de la température de croissance et du dopage Real-time in-situ flux monitoring in molecular beam epitaxy by wavelength-modulated atomic absorption spectroscopy [Invited] Graphene growth for device applications RF characterization of epitaxial graphene nano-ribbon field effect tansistors Exploring electronic structure of one-atom thick polycrystalline graphene films : a nano angle resolved photoemission study [Invited] Scanning tunnelling microscopy and angle-resolved photoelectron spectroscopy studies of graphene on SiC (C-face) substrate grown by Si flux-assisted molecular beam epitaxy Improved wet chemical transfer process to obtain clean high quality graphene Commutateur RF fabriqué à partir de matériau 2D Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs Graphene growth by molecular beam epitaxy on the carbon face of SiC Graphene growth and synthesis Carbon electronics for high-frequency applications [Invited] Graphene : what challenges for RF applications ? Carbohydrate-lectin interaction on graphene-coated surface plasmon resonance (SPR) interfaces Key parameters of CVD-grown graphene on copper foil and its transfer for radio-frequency applications Velocity saturation effect on low frequency noise in short channel single layer graphene field effect transistors (FETs) http://www.sudoc.fr/246237244/id Back-gated microwave field-effect transistors based on transferred CVD-grown graphene Towards high quality CVD graphene growth and transfer Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density Propriétés de nanostructures InAs réalisées par épitaxie par jets moléculaires sur des couches tampons AlInAs et GaInAs désadaptées sur substrat GaAs Les structures métamorphiques AlInAs/GaInAs sur substrat GaAs : croissance et applications Electron lifetime measurements of heavily C-doped InGaAs and GaAsSb as a function of the doping density Real-time in-situ flux monitoring by wavelength-modulated atomic absorption spectroscopy in molecular beam epitaxy : application to Ga flux measurement [Invited] Carbon materials : new trends for future electronic ? Carbon and nanowires based devices for high frequencey and low power applications Graphene nanoribbon field effect transistor for high frequency applications Growth kinetic studies of graphene on Cu foils Graphene field effect transistors on SiC with T-shaped gate : homogeneity and RF performance Conduction band offset at the (AIxGa1-x)yIn1-y/Ga0.52In0.48P interface : a photoluminescence study A 60GHz current gain cut off frequency graphene nano ribbon FET Epitaxial growth of MgO tunnel barrier on epitaxial graphene Optical Imaging and Characterization of Graphene and Other 2D Materials Using Quantitative Phase Microscopy High Frequency Characterization and Compact Electrical Modelling of Graphene Field Effect Transistors Fabrication and characterization of an epitaxial graphene nanoribbon-based field-effect transistor Investigation of indium nitride for micro-nanotechnology Terahertz near-field imaging using batch-fabricated cantilevers with 70 μm long tips Physical and electrical characterization of bubble free transferred single crystal graphene Electron lifetime measurements of heavily C-doped InGaAs and GaAsSb as a function of the doping density Graphene growth by molecular beam epitaxy on the carbon-face of SiC

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