About: High responsivity GaNAsSb p-i-n photodetectors at 1.3 µm grown by radio-frequency nitrogen plasma-assisted molecular beam epitaxy   Goto Sponge  NotDistinct  Permalink

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Bibliographic Citation
  • Tan K.H., Yoon S.F., Loke W.K., Wicaksono S., Ng T.K., Lew K.L., Stoehr A., Fedderwitz S., Weiss M., Jaeger D., Saadsaoud N., Dogheche El Hadj, Decoster D., Chazelas J.. High responsivity GaNAsSb p-i-n photodetectors at 1.3 µm grown by radio-frequency nitrogen plasma-assisted molecular beam epitaxy. Optics Express, Optical Society of America - OSA Publishing, 2008, 16, pp.7720-7725. ⟨10.1364/OE.16.007720⟩
Title
  • High responsivity GaNAsSb p-i-n photodetectors at 1.3 µm grown by radio-frequency nitrogen plasma-assisted molecular beam epitaxy
dc:date
  • 2008
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