Bibliographic Citation
| - Malbert N., Labat N., Curutchet A., Sury C., Hoel V., De Jaeger J.C., Defrance N., Douvry Y., Dua C., Oualli M., Bru-Chevallier C., Bluet J.M., Chikhaoui W.. Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs. Microelectronics Reliability, Elsevier, 2009, 49, pp.1216-1221. ⟨10.1016/j.microrel.2009.07.015⟩
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