Bibliographic Citation
| - Malbert N., Sury C., Curutchet A., Labat N., Dua C., Oualli M., Hoel V., Douvry Y., De Jaeger J.C., Bru-Chevallier C., Chikaoui W., Bluet J.M.. Characterization of the parasitic effects in InAlN/AlN/GaN HEMTs. 5th Space Agency-MOD Round Table Workshop on GaN Component Technologies, 2010, Netherlands. pp.84-87
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