About: Time domain analyses of trapping effects of AlInN/GaN HEMT devices   Goto Sponge  NotDistinct  Permalink

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  • Gaquiere C., Ducatteau D., Theron D., Medjdoub F., Poisson M.A.. Time domain analyses of trapping effects of AlInN/GaN HEMT devices. International Microwave Symposium, IMS 2009, Workshop WWC : Advanced Measurement Techniques, Adapted for Different Memory Effects, 2009, Boston, MA, United States
Title
  • Time domain analyses of trapping effects of AlInN/GaN HEMT devices
dc:date
  • 2009
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