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Bibliographic Citation
  • Bescond M., Lannoo M., Michelini Fabienne, Raymond L., M.G. Pala. 3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity. Microelectronics Journal, Elsevier, 2009, 40, pp.756-758
  • BescondM., LannooM., MicheliniFabienne, RaymondL., M.G.Pala . 3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity . Microelectronics Journal, Elsevier, 2009, 40, pp.756-758
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  • 3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity
dc:date
  • 2009
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