Bibliographic Citation
| - Pantzas K., El Gmili Y., Dickerson J., Gautier S., Largeau L., Mauguin O., Patriarche G., Suresh S., Moudakir T., Bishop C., Ahaitouf A., Rivera T., Tanguy C., Voss P.L., Ougazzaden A.. Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE. Journal of Crystal Growth, Elsevier, 2012, 370, pp.57-62. ⟨10.1016/j.jcrysgro.2012.08.041⟩
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