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  • KHANDELWAL S., YADAV C., AGNIHOTRI S., Chauhan Y.S., Curutchet A., Zimmer T., Dejaeger J.C., Defrance N., Fjeldly T.A.. Robust surface-potential-based compact model for GaN HEMT IC design. IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2013, 60, pp.3216-3222. ⟨10.1109/TED.2013.2265320⟩
Title
  • Robust surface-potential-based compact model for GaN HEMT IC design
dc:date
  • 2013
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