Bibliographic Citation
| - Lambert Benoit, Labat Nathalie, Carisetti Dominique, Karboyan Serge, Tartarin Jean-Guy, Thorpe J., Brunel Laurent, Curutchet Arnaud, Malbert Nathalie, Latu-Romain Eddy, Mermoux Michel. Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test. Microelectronics Reliability, Elsevier, 2012, 52 (9-10), pp.2184-2187
- Labat Nathalie, Karboyan Serge, Tartarin Jean-Guy, Brunel Laurent, Curutchet Arnaud, Malbert Nathalie, Latu-Romain Eddy, Mermoux Michel. Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test. Microelectronics Reliability, Elsevier, 2012, 52 (9-10), pp.2184-2187
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