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Author
Bibliographic Citation
  • Lambert B, Labat N, Carisetti D, Karboyan Serge, Tartarin Jean-Guy, Thorpe J, Brunel L, Curutchet A, Malbert N, Romain-Latu E, Mermoux M. Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test. Microelectronics Reliability, Elsevier, 2012, 52 (9-10), pp.2184-2187. ⟨10.1016/j.microrel.2012.06.100⟩
  • LambertB, LabatN, CarisettiD, KarboyanSerge, TartarinJean-Guy, ThorpeJ, BrunelL, CurutchetA, MalbertN, Romain-LatuE, MermouxM . Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test . Microelectronics Reliability, Elsevier, 2012, 52 (9-10), pp.2184-2187 . ⟨10.1016/j.microrel.2012.06.100⟩
Title
  • Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test
dc:date
  • 2012
Digital Object Identifier (DOI)
  • 10.1016/j.microrel.2012.06.100
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