About: Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wells   Goto Sponge  NotDistinct  Permalink

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Bibliographic Citation
  • Landesman Jean-Pierre, Jimenez Juan, Levallois Christophe, Pommereau Frédéric, Frigeri Cesare, Torres Alfredo, Léger Yoan, Beck Alexandre, Rhallabi Ahmed. Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wells. Journal of Vacuum Science and Technology A, American Vacuum Society, 2016, 34 (4), pp.041304. ⟨10.1116/1.4950445⟩
Title
  • Defect formation during chlorine-based dry etching and their effects on the electronic and structural properties of InP/InAsP quantum wells
dc:date
  • 2016
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