Bibliographic Citation
| - Bescond M, Autran Jean-Luc, Munteanu Daniela, Lannoo M. Atomic-scale modeling of double-gate MOSFETs using a tight-binding Green's function formalism. Solid-State Electronics, Elsevier, 2004, 48 (4), pp.567-574. ⟨10.1016/j.sse.2003.09.025⟩
- Bescond M, Autran Jean-Luc, Munteanu Daniela, Lannoo M. Atomic-scale modeling of double-gate MOSFETs using a tight-binding Green's function formalism. Solid-State Electronics, 2004, 48 (4), pp.567-574. ⟨10.1016/j.sse.2003.09.025⟩
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