About: Temperature dependence of the gain in InGaN/GaN quantum wells microlasers grown by MOCVD

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About: Temperature dependence of the gain in InGaN/GaN quantum wells microlasers grown by MOCVD Goto Sponge NotDistinct Permalink

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Author	Colombelli, Raffaele (19..-....) Boucaud, Philippe (19..-.... ; chercheur en électronique) Guillet, Thierry (1977-....) Paulillo, Bruno (1987-....) El Kurdi, Moustafa (1977-....) Checoury, Xavier (1974-....) Gayral, Bruno (19..-....) Sauvage, Sébastien (19..-....) Doyennette, Laetitia (1980-....) Semond, Fabrice (19..-....) Duboz, Jean-Yves (1964-.... ; physicien) Damilano, Benjamin Brimont, Christelle (1980-....) http://www.idref.fr/23411066X/id Tabataba-Vakili, Farsane (1991-....)
Bibliographic Citation	DOYENNETTE Laetitia, Tabataba-vakili Farsane, Roland I., El Kurdi M., Checoury X., Sauvage S., Paulillo B, Colombelli R, RENNESSON S., Frayssinet Eric, Brault Julien, Damilano B., Duboz J. y., Semond F., Gayral B., Boucaud P., GUILLET Thierry. Temperature dependence of the gain in InGaN/GaN quantum wells microlasers grown by MOCVD. International Workshop on Nitride Semiconductors 2018 (IWN 2018), Nov 2018, Kanazawa, Japan
Title	Temperature dependence of the gain in InGaN/GaN quantum wells microlasers grown by MOCVD
dc:date	2018

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