Bibliographic Citation
| - Reboh S., Barraud S., Loubet N., Bernier N., Audoit G., Rouvière J.-L., Augendre E., Li J., Gambacorti N.. Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology. Applied Physics Letters, American Institute of Physics, 2018, 112 (5), pp.051901. ⟨10.1063/1.5010997⟩
- Reboh S., Barraud S., Loubet N., Bernier N., Audoit G., Rouvière J.-L., Augendre E., Li J., Gambacorti N. . Strain, stress, and mechanical relaxation in fin-patterned Si/SiGe multilayers for sub-7 nm nanosheet gate-all-around device technology . Applied Physics Letters, 2018, 112 (5), pp.051901 . ⟨10.1063/1.5010997⟩
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