AttributesValues
Author
Bibliographic Citation
  • Werquin M., Vellas N., Guhel Y., Ducatteau D., Boudart B., Pesant J. C., Bougrioua Z., Germain M., Jaeger J. C. De, Gaquiere C.. ‘First results of AlGaN/GaN HEMTs on sapphire substrate using an argon ion implant isolation technology’. Microwave and Optical Technology Letters, 2005
Title
  • ‘First results of AlGaN/GaN HEMTs on sapphire substrate using an argon ion implant isolation technology’
dc:date
  • 2005
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