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dcterms:bibliographicCitation
Tan K.H., Yoon S.F., Loke W.K., Wicaksono S., Ng T.K., Lew K.L., Stoehr A., Fedderwitz S., Weiss M., Jaeger D., Saadsaoud N., Dogheche El Hadj, Decoster D., Chazelas J.. High responsivity GaNAsSb p-i-n photodetectors at 1.3 µm grown by radio-frequency nitrogen plasma-assisted molecular beam epitaxy. Optics Express, Optical Society of America - OSA Publishing, 2008, 16, pp.7720-7725. ⟨10.1364/OE.16.007720⟩
dcterms:title
High responsivity GaNAsSb p-i-n photodetectors at 1.3 µm grown by radio-frequency nitrogen plasma-assisted molecular beam epitaxy
dc:date
2008