<https://hal.archives-ouvertes.fr/hal-01343345#id>	<http://id.loc.gov/vocabulary/relators/aut>	<http://www.idref.fr/233300023/id> .
<https://hal.archives-ouvertes.fr/hal-01343345#id>	<http://purl.org/dc/terms/bibliographicCitation>	"Karboyan Serge, Tartarin Jean-Guy, Lambert B. Analysis of Barrier Inhomogeneities in AlGaN/GaN HEMTs' Schottky Diodes by I-V-T measurements. EuMC 2013, Oct 2013, Nuremberg, Germany. 4p" .
<https://hal.archives-ouvertes.fr/hal-01343345#id>	<http://purl.org/dc/terms/title>	"Analysis of Barrier Inhomogeneities in AlGaN/GaN HEMTs' Schottky Diodes by I-V-T measurements" .
<https://hal.archives-ouvertes.fr/hal-01343345#id>	<http://id.loc.gov/vocabulary/relators/aut>	<http://www.idref.fr/08322906X/id> .
<https://hal.archives-ouvertes.fr/hal-01343345#id>	<http://purl.org/dc/elements/1.1/date>	"2013" .