. "Temperature dependence of the gain in InGaN/GaN quantum wells microlasers grown by MOCVD" . . . . . . . . . . . "2018" . . . . "DOYENNETTE Laetitia, Tabataba-vakili Farsane, Roland I., El Kurdi M., Checoury X., Sauvage S., Paulillo B, Colombelli R, RENNESSON S., Frayssinet Eric, Brault Julien, Damilano B., Duboz J. y., Semond F., Gayral B., Boucaud P., GUILLET Thierry. Temperature dependence of the gain in InGaN/GaN quantum wells microlasers grown by MOCVD. International Workshop on Nitride Semiconductors 2018 (IWN 2018), Nov 2018, Kanazawa, Japan" . .