About: Arnaud Curutchet

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An Entity of Type : foaf:Person, within Data Space : data.idref.fr associated with source document(s)

Attributes	Values
type	Person
sameAs	Curutchet, Arnaud (1975-....) Curutchet, Arnaud (1975-....)
Life Event	http://www.idref.fr/094637644/birth
preferred label	Curutchet, Arnaud (1975-....)
name	Arnaud Curutchet
dbpedia-owl:citizenship	http://sws.geonames.org/3017382/
Language	http://lexvo.org/id/iso639-3/fra
isni:identifierValid	000000035830056X
Given name	Arnaud
familyName	Curutchet
has biographical i...tion (Deprecated)	Titulaire d'un doctorat de sciences physiques et de l'ingénieur, spécialité : électronique (Bordeaux 1, 2005). Rattaché à : Université de Bordeaux (en 2017)
gender	male
Scopus ID	6508373947
is Thesis advisor of	http://www.sudoc.fr/184434181/id http://www.sudoc.fr/159273331/id http://www.sudoc.fr/191195154/id http://www.sudoc.fr/235521531/id
is Author of	http://www.sudoc.fr/094636966/id Etude du contact Schottky de HEMTs AlGaN/GaN sur substrat SiC après 7000h de test de vieillissement de type HTOL Analysis of low frequency drain current noise in AlGaN/GaN HEMTs on Si substrate Etude du bruit aux basses fréquences dans les transistors à haute mobilité électronique à base de Nitrure de Gallium Ballistic nanodevices for high frequency applications Analysis of Schottky Gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress Characterisation and modeling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs https://hal.archives-ouvertes.fr/hal-01002658#id https://hal.archives-ouvertes.fr/hal-00362358#id Non linear microwave characterization and modelization of carbon nanotube FETs RF doubling and rectification in three-terminal junctions : experimental characterization and Monte Carlo analysis Schottky gate of AlGaN/GaN HEMTs: investigation with DC and low frequency noise measurements after 7000 hours HTOL test RF doubling and rectification in Three-Terminal Junctions: experimental characterization and Monte Carlo analysis Three-terminal junctions operating as mixers, frequency doublers and detectors : a broad-band frequency numerical and experimental study at room temperature Characterization of carbon nanotube field effect transistors using an active load pull LSNA setup Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress Etude de l’effet « belly shape » dans les HEMT GaN sur substrat SiC Low frequency drain noise comparison of AlGaN/GaN HEMTs grown on silicon, SiC and sapphire substrates Caractérisation et modélisation non linéaire de Transistors hyperfréquences à Effet de Champ à base de Nano tubes de Carbone (CNFETs) à l'aide d'un Analyseur de réseau Large Signal (LSNA) https://hal.archives-ouvertes.fr/hal-00473638#id Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements Nonlinear Characterization and Modeling of Carbon Nanotube Field-Effect Transistors Caractérisation et modélisation non linéaire de transistors hyperfréquences à effet de champ à base de nanotubes de carbone (CNFETs) à l'aide d'un analyseur de réseau large signal (LSNA) Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs Characterization of the parasitic effects in InAlN/AlN/GaN HEMTs Characterization of carbon nanotube field-effect transistors using an active load pull LSNA setup Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test Low-frequency drain noise in AlGaN/GaN HEMTs on Si substrate Reliability assessment in different HTO test conditions of AlGaN/GaN HEMTs Low frequency Noise evolution of AlGaN/GaN HEMT after 2000 Hours of HTRB and HTO life test Temperature dependent degradation modes in AlGaN/GaN HEMTs Évaluation de la fiabilité des composants HEMTs AlGaN / GaN à grille nanométrique sur substrat de silicium par des essais de vieillissement accéléré on-state Évaluation de la fiabilité des composants HEMTs AlGaN / GaN à grille nanométrique sur substrat de silicium par des essais de vieillissement accéléré « on-state » http://www.sudoc.fr/246854332/id Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hours on-state and off-state hot-electron stress Degradations during pulsed measurements in temperature of AlGaN/GaN HEMTs An advanced ageing methodology for robustness assessment of normally-off AlGaN/GaN HEMT Analyse du bruit basses fréquences du courant de drain de HEMTs AlGaN/GaN sur substrat silicium et saphir Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs https://hal.archives-ouvertes.fr/hal-01002539#id Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress Robust surface-potential-based compact model for GaN HEMT IC design Caractérisation et modélisation non linéaire de Transistors à Effet de Champs à Nano tubes de Carbone (CNFETs) à l'aide d'un Analyseur de réseau non linéaire (LSNA)
is primary topic of	http://www.idref.fr/094637644
is Opponent of	http://www.sudoc.fr/197424597/id http://www.sudoc.fr/190385944/id http://www.sudoc.fr/157029050/id http://www.sudoc.fr/260318892/id http://www.sudoc.fr/225745585/id

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